onsemi NSVBCH807-25LT1G

onsemi · Transistors (BJTs) · MPN NSVBCH807-25LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain160
Pd - Power Dissipation225mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+175℃
Vce Saturation(VCE(sat))700mV

Technical details

45V 160 1 PNP PNP 500mA SOT-23 Single Bipolar Transistors RoHS

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