onsemi NSVBC847BDW1T2G

onsemi · Transistors (BJTs) · MPN NSVBC847BDW1T2G

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation380mW
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))600mV
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

200 45V 380mW NPN 100mA SOT-363 Bipolar Transistor Arrays RoHS

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