onsemi · Transistors (BJTs) · MPN NSV40300MDR2G
No reviews yet — be the first to review onsemi NSV40300MDR2G.
| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 180 |
| Pd - Power Dissipation | 653mW |
| Collector - Emitter Voltage VCEO | 40V |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Vce Saturation(VCE(sat)) | 135mV |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -55℃~+150℃ |
180 653mW 40V PNP 3A SOIC-8 Bipolar Transistor Arrays RoHS