onsemi NSV20201DMTWTBG

onsemi · Transistors (BJTs) · MPN NSV20201DMTWTBG

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain100
Pd - Power Dissipation2.27W
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))330mV

Technical details

20V 100 NPN 2A WDFN-6-EP(2x2) Single Bipolar Transistors RoHS

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