onsemi NSV1C300ET4G

onsemi · Transistors (BJTs) · MPN NSV1C300ET4G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain120
Pd - Power Dissipation2.1W
typePNP
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

100V 120 PNP 3A DPAK Single Bipolar Transistors RoHS

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