onsemi · Transistors (BJTs) · MPN NSV1C300ET4G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 100V |
| DC Current Gain | 120 |
| Pd - Power Dissipation | 2.1W |
| type | PNP |
| Current - Collector(Ic) | 3A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 400mV |
100V 120 PNP 3A DPAK Single Bipolar Transistors RoHS