onsemi NST3946DXV6T1G

onsemi · Transistors (BJTs) · MPN NST3946DXV6T1G

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Collector - Emitter Voltage VCEO40V
Pd - Power Dissipation500mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz;250MHz
Vce Saturation(VCE(sat))400mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

100 40V 500mW NPN+PNP 200mA SOT-563 Bipolar Transistor Arrays RoHS

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