onsemi · Transistors (BJTs) · MPN NSS30100LT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 30V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 710mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 650mV |
30V 100 1 PNP PNP 1A SOT-23 Single Bipolar Transistors RoHS