onsemi NSS20200DMTTBG

onsemi · Transistors (BJTs) · MPN NSS20200DMTTBG

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Specifications

Current - Collector Cutoff100nA
DC Current Gain100
Pd - Power Dissipation2.1W
Collector - Emitter Voltage VCEO20V
Transition frequency(fT)155MHz
typePNP
Vce Saturation(VCE(sat))390mV
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃

Technical details

100 2.1W 20V PNP 2A WDFN-6-EP(2x2) Bipolar Transistor Arrays RoHS

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