onsemi · Transistors (BJTs) · MPN NSS1C301ET4G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 120MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 120 |
| Pd - Power Dissipation | 2.1W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Vce Saturation(VCE(sat)) | 250mV |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor NPN 100V 3A 120MHz 2.1W Surface Mount TO-252(DPAK)