onsemi · Transistors (BJTs) · MPN NSS1C201MZ4T3G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 120 |
| Pd - Power Dissipation | 800mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 2A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 180mV |
Bipolar (BJT) Transistor NPN 100V 2A 100MHz 800mW Surface Mount SOT-223-3