onsemi NSS12200WT1G

onsemi · Transistors (BJTs) · MPN NSS12200WT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain100
Pd - Power Dissipation450mW
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))170mV
Operating Temperature-55℃~+150℃

Technical details

12V 100 PNP 2A SOT-363-6 Single Bipolar Transistors RoHS

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