onsemi NSS12100M3T5G

onsemi · Transistors (BJTs) · MPN NSS12100M3T5G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation460mW
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))30mV

Technical details

Bipolar (BJT) Transistor PNP 12V 1A 460mW Surface Mount SOT-723

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