onsemi · Transistors (BJTs) · MPN NSBC114YPDXV6T1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 80 |
| Vce Saturation(VCE(sat)) | 250mV |
| Output Voltage(VO(on)) | 200mV |
| Input Resistor | 13kΩ |
| Resistor Ratio | 0.25 |
| Pd - Power Dissipation | 500mW |
| Voltage - Input(Max)(VI(off)) | 700mV |
| Input Voltage (VI(on)@Ic,Vce) | 1.4V@1mA,200mV |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| type | NPN+PNP |
Pre-Biased Bipolar Transistor (BJT) 50V 100mA 500mW Surface Mount SOT-563