onsemi · Transistors (BJTs) · MPN NSBC114EPDXV6T1G
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| DC Current Gain | 35 |
|---|---|
| Input Resistor | 13kΩ |
| Resistor Ratio | 1.2 |
| Number | - |
| Pd - Power Dissipation | 357mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
35 357mW 100mA 50V SOT-563-6 Bipolar Transistor Arrays, Pre-Biased RoHS