onsemi NSBA114EDXV6T1

onsemi · Transistors (BJTs) · MPN NSBA114EDXV6T1

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Specifications

Current - Collector Cutoff100nA
typePNP
Number2 PNP
Pd - Power Dissipation357mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

2 PNP 357mW 100mA 50V Bipolar Transistor Arrays, Pre-Biased RoHS

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