onsemi · Transistors (BJTs) · MPN NJVMJD6039T4G
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| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 80V |
| DC Current Gain | - |
| Pd - Power Dissipation | 1.75W |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Vce Saturation(VCE(sat)) | 2.5V |
| Operating Temperature | -65℃~+150℃@(Tj) |
80V NPN 4A DPAK Single Bipolar Transistors RoHS