onsemi · Transistors (BJTs) · MPN NJVMJD350T4G
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| Current - Collector Cutoff | 100uA |
|---|---|
| Transition frequency(fT) | 10MHz |
| Collector - Emitter Voltage VCEO | 300V |
| DC Current Gain | 30 |
| Pd - Power Dissipation | 1.56W |
| type | PNP |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1V |
300V 30 PNP 500mA DPAK Single Bipolar Transistors RoHS