onsemi · Transistors (BJTs) · MPN NJVMJD3055T4G
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| Current - Collector Cutoff | 2uA |
|---|---|
| Transition frequency(fT) | 2MHz |
| Collector - Emitter Voltage VCEO | 60V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 20 |
| Pd - Power Dissipation | 20W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 10A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.1V |
Bipolar (BJT) Transistor NPN 60V 10A 2MHz 20W Surface Mount DPAK