onsemi · Transistors (BJTs) · MPN NJVMJD243T4G
No reviews yet — be the first to review onsemi NJVMJD243T4G.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 40MHz |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 7V |
| DC Current Gain | 180 |
| Pd - Power Dissipation | 12.5W |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 4A |
| Vce Saturation(VCE(sat)) | 600mV |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor NPN 100V 4A 40MHz 12.5W Surface Mount DPAK-3