onsemi NJVMJD127T4

onsemi · Transistors (BJTs) · MPN NJVMJD127T4

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain1000@4V,4A
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)8A
Operating Temperature-65℃~+150℃@(Tj)
Vce Saturation(VCE(sat))4V@80mA,8A

Technical details

100V 1000@4V,4A PNP 8A DPAK Single Bipolar Transistors

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