onsemi NJT4030PT1G

onsemi · Transistors (BJTs) · MPN NJT4030PT1G

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Specifications

Current - Collector Cutoff6nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO40V
DC Current Gain220
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor PNP 40V 3A 160MHz 2W Surface Mount SOT-223

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