onsemi NJL1302DG

onsemi · Transistors (BJTs) · MPN NJL1302DG

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)30MHz
Collector - Emitter Voltage VCEO260V
Emitter-Base Voltage VEBO5V
DC Current Gain75
Pd - Power Dissipation200W
Number1 PNP
typePNP
Current - Collector(Ic)15A
Vce Saturation(VCE(sat))3V
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 260V 15A 30MHz 200W Through Hole TO-264-5

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