onsemi NJD2873T4G

onsemi · Transistors (BJTs) · MPN NJD2873T4G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)65MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation15W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-65℃~+175℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 50V 2A 65MHz 15W Surface Mount TO-252(DPAK)

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