onsemi NJD1718T4G

onsemi · Transistors (BJTs) · MPN NJD1718T4G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain70
Pd - Power Dissipation1.68W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

50V 70 1 PNP PNP 2A DPAK-3 Single Bipolar Transistors RoHS

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