onsemi · FETs & Power MOSFETs · MPN NID9N05ACLT4G
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| Configuration | Common source |
|---|---|
| Gate Charge(Qg) | 7nC@4.5V |
| Drain to Source Voltage | 52V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.75V |
| Pd - Power Dissipation | 1.74W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 67mΩ@12V |
| Number | - |
| Input Capacitance(Ciss) | 250pF |
52V 9A 1.75V 1.74W 67mΩ@12V DPAK Single FETs, MOSFETs RoHS