onsemi NDT454P

onsemi · FETs & Power MOSFETs · MPN NDT454P

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)5.9A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)38mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)950pF

Technical details

30V 5.9A 3W 38mΩ@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS

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