onsemi NDT451AN

onsemi · FETs & Power MOSFETs · MPN NDT451AN

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)7.2A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)50mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)720pF
TypeN-Channel

Technical details

N-Channel 30V 7.2A 3W Surface Mount SOT-223

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