onsemi NDT3055L

onsemi · FETs & Power MOSFETs · MPN NDT3055L

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)4A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)120mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)345pF
TypeN-Channel

Technical details

N-Channel 60V 4A 3W Surface Mount SOT-223

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