onsemi NDT3055

onsemi · FETs & Power MOSFETs · MPN NDT3055

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)250pF
TypeN-Channel

Technical details

N-Channel 60V 4A 25W Surface Mount SOT-223

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