onsemi NDT2955

onsemi · FETs & Power MOSFETs · MPN NDT2955

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)500mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)601pF

Technical details

P-Channel 60V 2.5A Surface Mount SOT-223

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