onsemi · FETs & Power MOSFETs · MPN NDT014
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 155pF |
60V 2.7A 4V 3W 180mΩ@10V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS