onsemi · FETs & Power MOSFETs · MPN NDS9959
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 50V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 300mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 250pF |
| Type | N-Channel |
50V 2A 4V 2W 300mΩ@10V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS