onsemi · FETs & Power MOSFETs · MPN NDS9952A
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | - |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 3.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 130mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel + P-Channel |
3.7A 2.8V 1.6W 130mΩ@10V N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS