onsemi · FETs & Power MOSFETs · MPN NDS9407-G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 22nC@10V |
| Current - Continuous Drain(Id) | 3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 150mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 732pF |
60V 3A 3V 2.5W 150mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS