onsemi · FETs & Power MOSFETs · MPN NDS8961
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 150mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 190pF |
| Type | N-Channel |
30V 3.1A 3V 1.6W 150mΩ@10V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS