onsemi NDS8434

onsemi · FETs & Power MOSFETs · MPN NDS8434

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Specifications

Configuration-
Gate Charge(Qg)80nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)1.07nF
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)-
Number1 P-Channel
Input Capacitance(Ciss)2.33nF

Technical details

20V 1V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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