onsemi · FETs & Power MOSFETs · MPN NDS356P
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| Gate Charge(Qg) | 5nC@5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 255pF |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 300mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 180pF |
| Type | P-Channel |
20V 1.1A 2.5V 500mW 300mΩ@4.5V 1 P-Channel P-Channel SOT-23-3 Single FETs, MOSFETs RoHS