onsemi NDS355AN

onsemi · FETs & Power MOSFETs · MPN NDS355AN

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Specifications

Gate Charge(Qg)5nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)48pF
RDS(on)125mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)195pF
TypeN-Channel

Technical details

N-Channel 30V 1.7A 0.5W Surface Mount SOT-23

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