onsemi NDS352AP

onsemi · FETs & Power MOSFETs · MPN NDS352AP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)3nC@4.5V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)900mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)500mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)135pF
TypeP-Channel

Technical details

P-Channel 30V 0.9A 0.5W Surface Mount SuperSOT-7

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