onsemi · FETs & Power MOSFETs · MPN NDS351AN
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| Gate Charge(Qg) | 1.8nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 15pF |
| RDS(on) | 160mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 145pF |
N-Channel 30V 1.4A 0.5W Surface Mount SOT-23-3