onsemi · FETs & Power MOSFETs · MPN NDS336P
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 8.5nC@4.5V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 500mW |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 270mΩ@2.7V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 360pF |
| Type | P-Channel |
20V 1.2A 1V 500mW 270mΩ@2.7V 1 P-Channel P-Channel SOT-23-3 Single FETs, MOSFETs RoHS