onsemi NDS332P

onsemi · FETs & Power MOSFETs · MPN NDS332P

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Specifications

Gate Charge(Qg)5nC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)410mΩ@2.7V
Number1 P-Channel
Input Capacitance(Ciss)195pF
TypeP-Channel

Technical details

P-Channel 20V 1A 0.5W Surface Mount SOT-23-3

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