onsemi NDS0610

onsemi · FETs & Power MOSFETs · MPN NDS0610

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Specifications

Gate Charge(Qg)2.5nC
Drain to Source Voltage60V
Current - Continuous Drain(Id)120mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)10Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)79pF

Technical details

P-Channel 60V 0.12A 0.36W Surface Mount SOT-23

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