onsemi NDS0605

onsemi · FETs & Power MOSFETs · MPN NDS0605

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Specifications

Gate Charge(Qg)1.8nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)10pF
Current - Continuous Drain(Id)180mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation360mW
Reverse Transfer Capacitance (Crss@Vds)4pF
RDS(on)1Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)79pF
TypeP-Channel

Technical details

P-Channel 60V 0.18A 0.36W Surface Mount SOT-23

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