onsemi · FETs & Power MOSFETs · MPN NDP708AE
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| Gate Charge(Qg) | 130nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 400pF |
| RDS(on) | 22mΩ@10V |
| Input Capacitance(Ciss) | 3.6nF |
| Type | N-Channel |
80V 60A 4V 150W 22mΩ@10V N-Channel Single FETs, MOSFETs RoHS