onsemi NDP708AE

onsemi · FETs & Power MOSFETs · MPN NDP708AE

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Specifications

Gate Charge(Qg)130nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1nF
Current - Continuous Drain(Id)60A
Operating Temperature --65℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)400pF
RDS(on)22mΩ@10V
Input Capacitance(Ciss)3.6nF
TypeN-Channel

Technical details

80V 60A 4V 150W 22mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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