onsemi NDP6060L

onsemi · FETs & Power MOSFETs · MPN NDP6060L

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Specifications

Gate Charge(Qg)60nC@5V
Drain to Source Voltage60V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)48A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)400pF
RDS(on)40mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

N-Channel 60V 48A 100W Through Hole TO-220

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