onsemi NDP6060

onsemi · FETs & Power MOSFETs · MPN NDP6060

No reviews yet — be the first to review onsemi NDP6060.

Specifications

Gate Charge(Qg)70nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)48A
Operating Temperature --65℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)400pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

N-Channel 60V 48A 100W Through Hole TO-220

Related FETs & Power MOSFETs