onsemi · FETs & Power MOSFETs · MPN NDP6020P
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| Gate Charge(Qg) | 35nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 24A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 215pF |
| RDS(on) | 50mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.59nF |
20V 24A 700mV 60W 50mΩ@4.5V 1 P-Channel TO-220 Single FETs, MOSFETs RoHS