onsemi · FETs & Power MOSFETs · MPN NDP5060
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 225pF |
| Current - Continuous Drain(Id) | 26A |
| Operating Temperature - | -65℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 78W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 50mΩ@10V |
| Input Capacitance(Ciss) | 630pF |
| Type | N-Channel |
60V 26A 4V 78W 50mΩ@10V N-Channel Single FETs, MOSFETs RoHS