onsemi · FETs & Power MOSFETs · MPN NDH8521C
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| Current - Continuous Drain(Id) | 3.8A |
|---|---|
| Pd - Power Dissipation | 800mW |
| RDS(on) | 33mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 500pF |
| Gate Charge(Qg) | 25nC@10V |
| Operating Temperature | -55℃~+150℃ |
3.8A 800mW 33mΩ@10V 2V 1 N-Channel + 1 P-Channel TSOP-8-3.30mm FET, MOSFET Arrays